Datasheet

Memory
MC9S08GT16A/GT8A Data Sheet, Rev. 1
52 Freescale Semiconductor
program time provided that the conditions above are met. In the case the next sequential address is the
beginning of a new row, the program time for that byte will be the standard time instead of the burst time.
This is because the high voltage to the array must be disabled and then enabled again. If a new burst
command has not been queued before the current command completes, then the charge pump will be
disabled and high voltage removed from the array.
Figure 4-3. FLASH Burst Program Flowchart
1
0
FCBEF ?
START
WRITE TO FLASH
TO BUFFER ADDRESS AND DATA
WRITE COMMAND ($25) TO FCMD
NO
YES
FPVIO OR
WRITE 1 TO FCBEF
TO LAUNCH COMMAND
AND CLEAR FCBEF
(Note 2)
NO
YES
NEW BURST COMMAND ?
1
0
FCCF ?
ERROR EXIT
DONE
Note 2: Wait at least four bus cycles before
1
0
FACCERR ?
CLEAR ERROR
FACCERR ?
Note 1: Required only once after reset.
WRITE TO FCDIV
(Note 1)
checking FCBEF or FCCF.