Datasheet

Electrical Characteristics
MC9S08GT16A/GT8A Data Sheet, Rev. 1
262 Freescale Semiconductor
A.5 Electrostatic Discharge (ESD) Protection Characteristics
Although damage from electrostatic discharge (ESD) is much less common on these devices than on early
CMOS circuits, normal handling precautions should be used to avoid exposure to static discharge.
Qualification tests are performed to ensure that these devices can withstand exposure to reasonable levels
of static without suffering any permanent damage.
All ESD testing is in conformity with AEC-Q100 Stress Test Qualification for Automotive Grade
Integrated Circuits. During the device qualification ESD stresses were performed for the Human Body
Model (HBM), the Machine Model (MM) and the Charge Device Model (CDM).
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification. Complete DC parametric and functional testing is performed per the applicable device
specification at room temperature followed by hot temperature, unless specified otherwise in the device
specification
A.6 DC Characteristics
This section includes information about power supply requirements, I/O pin characteristics, and power
supply current in various operating modes.
Table A-4. ESD and Latch-up Test Conditions
Model Description Symbol Value Unit
Human Body Series Resistance
R1 1500
Ω
Storage Capacitance C 100 pF
Number of Pulse per pin — 3
Machine Series Resistance
R1 0
Ω
Storage Capacitance C 200 pF
Number of Pulse per pin — 3
Charge Device
Model
Series Resistance
R1
Ω
Storage Capacitance C pF
Number of Pulse per pin —
Latch-Up Minimum input voltage limit –2.5 V
Maximum input voltage limit 7.5 V
Table A-5. MCU Operating Conditions
Characteristic Min Typ Max Unit
Supply Voltage 1.8 — 3.6 V
Temperature
M
C
–40
–40
—
—
125
85
°C