Datasheet

Electrical Characteristics
MC9S08GT16A/GT8A Data Sheet, Rev. 1
Freescale Semiconductor 283
A.11 FLASH Specifications
This section provides details about program/erase times and program-erase endurance for the FLASH
memory.
Program and erase operations do not require any special power sources other than the normal V
DD
supply.
For more detailed information about program/erase operations, see Chapter 4, “Memory.”
Table A-15. FLASH Characteristics
Characteristic Symbol Min Typical Max Unit
Supply voltage for program/erase
T ≤ 85°C
T > 85°C
V
prog/erase
1.8
2.1
3.6
3.6
V
V
Supply voltage for read operation
0 < f
Bus
< 8 MHz
0 < f
Bus
< 20 MHz
V
Read
1.8
2.08
3.6
3.6
V
Internal FCLK frequency
1
1
The frequency of this clock is controlled by a software setting.
f
FCLK
150 200 kHz
Internal FCLK period (1/FCLK) t
Fcyc
5 6.67 µs
Byte program time (random location)
(2)
t
prog
9
t
Fcyc
Byte program time (burst mode)
(2)
t
Burst
4
t
Fcyc
Page erase time
2
2
These values are hardware state machine controlled. User code does not need to count cycles. This information
supplied for calculating approximate time to program and erase.
t
Page
4000
t
Fcyc
Mass erase time
(2)
t
Mass
20,000
t
Fcyc
Byte program current
3
3
The program and erase currents are additional to the standard run I
DD
. These values were measured at room
temperatures with V
DD
= 3.0 V, bus frequency = 4.0 MHz.
RI
DDBP
—4—mA
Page erase current
3
RI
DDPE
—6—mA
Program/erase endurance
4
T
L
to T
H
= –40°C to +125°C
T = 25°C
4
Typical endurance for FLASH was evaluated for this product family on the 9S12Dx64. For additional
information on how Freescale Semiconductor defines typical endurance, please refer to Engineering Bulletin
EB619/D, Typical Endurance for Nonvolatile Memory.
10,000
100,000
—
—
cycles
Data retention
5
5
Typical data retention values are based on intrinsic capability of the technology measured at high temperature
and de-rated to 25°C using the Arrhenius equation. For additional information on how Freescale Semiconductor
defines typical data retention, please refer to Engineering Bulletin EB618/D, Typical Data Retention for
Nonvolatile Memory.
t
D_ret
15 100 — years