Datasheet

Appendix A Electrical Characteristics
MC9S08JM16 Series Data Sheet, Rev. 2
Freescale Semiconductor 353
11 P Internal pullup resistors
3
R
PU
20 45 65 kΩ
12 P Internal pulldown resistors
4
R
PD
20 45 65 kΩ
13 T Internal pullup resistor to USBDP (to V
USB33
)
Idle
Transmit
R
PUPD
900
1425
1300
2400
1575
3090
kΩ
14 D DC injection current
5 6 7 8
Single pin limit
V
IN
> V
DD
V
IN
< V
SS
Total MCU limit, includes sum of all stressed pins
V
IN
> V
DD
V
IN
< V
SS
I
IC
0
0
—
—
2
–0.2
mA
0
0
—
—
25
–5
mA
15 D Input capacitance; all non-supply pins C
In
—— 8pF
16 D RAM retention voltage V
RAM
—0.61.0V
17 D POR re-arm voltage V
POR
0.9 1.4 2.0 V
18 D POR re-arm time t
POR
10 — — μs
19 P
Low-voltage detection threshold —
High range
V
DD
falling
V
DD
rising
V
LVD1
3.9
4.0
4.0
4.1
4.1
4.2
V
P
Low-voltage detection threshold —
Low range
V
DD
falling
V
DD
rising
V
LVD0
2.48
2.54
2.56
2.62
2.64
2.70
V20
P
Low-voltage warning threshold —
High range 1
V
DD
falling
V
DD
rising
V
LVW 3
4.5
4.6
4.6
4.7
4.7
4.8
V21
C
Low-voltage warning threshold —
High range 0
V
DD
falling
V
DD
rising
V
LVW 2
4.2
4.3
4.3
4.4
4.4
4.5
V22
P
Low-voltage warning threshold
Low range 1
V
DD
falling
V
DD
rising
V
LVW 1
2.84
2.90
2.92
2.98
3.00
3.06
V23
C
Low-voltage warning threshold —
Low range 0
V
DD
falling
V
DD
rising
V
LVW 0
2.66
2.72
2.74
2.80
2.82
2.88
V24
25 T
Low-voltage inhibit reset/recover hysteresis
+5 V
+3 V
V
hys
—
—
100
60
—
—
mV
mV
26 C
Bandgap voltage reference
factory trimmed at V
DD
= 5.0 V, Temp = 25°C
V
BG
1.19 1.20 1.21 V
1
Typical values are based on characterization data at 25°C unless otherwise stated.
2
Maximum is highest voltage that POR is guaranteed.
Table 7. DC Characteristics (continued)
Num C Parameter Symbol Min Typical
1
Max. Unit