Datasheet
Appendix A Electrical Characteristics
MC9S08JM16 Series Data Sheet, Rev. 2
Freescale Semiconductor 369
A.13 Flash Specifications
This section provides details about program/erase times and program-erase endurance for the flash
memory.
Program and erase operations do not require any special power sources other than the normal V
DD
supply.
For more detailed information about program/erase operations.
A.14 USB Electricals
The USB electricals for the S08USBV1 module conform to the standards documented by the Universal
Serial Bus Implementers Forum. For the most up-to-date standards, visit http://www.usb.org.
Table A-15. Flash Characteristics
Num C Characteristic Symbol Min Typical
1
1
Typical values are based on characterization data at V
DD
= 5.0 V, 25°C unless otherwise stated.
Max Unit
1 Supply voltage for program/erase V
prog/erase
2.7 5.5 V
2 Supply voltage for read operation V
Read
2.7 5.5 V
3 Internal FCLK frequency
2
2
The frequency of this clock is controlled by a software setting.
f
FCLK
150 200 kHz
4 Internal FCLK period (1/FCLK) t
Fcyc
56.67μs
5 Byte program time (random location)
(2)
t
prog
9t
Fcyc
6 Byte program time (burst mode)
(2)
t
Burst
4t
Fcyc
7 Page erase time
3
3
These values are hardware state machine controlled. User code does not need to count cycles. This information
supplied for calculating approximate time to program and erase.
t
Page
4000 t
Fcyc
8 Mass erase time
2
t
Mass
20,000 t
Fcyc
9 C Program/erase endurance
4
T
L
to T
H
= –40°C to + 85°C
T = 25°C
4
Typical endurance for Flash is based on the intrinsic bitcell performance. For additional information on how
Freescale Semiconductor defines typical endurance, please refer to Engineering Bulletin EB619/D, Ty pi ca l
Endurance for Nonvolatile Memory.
10,000
—
—
100,000
—
—
cycles
10 Data retention
5
5
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and
de-rated to 25 °C using the Arrhenius equation. For additional information on how Freescale Semiconductor defines
typical data retention, please refer to Engineering Bulletin EB618/D, Typical Data Retention for Nonvolatile Memory.
t
D_ret
15 100 — years