Datasheet

MC9S08JS16 Series MCU Data Sheet, Rev. 4
Electrical Characteristics
Freescale Semiconductor8
P
D
= P
int
+ P
I/O
P
int
= I
DD
× V
DD
, Watts — chip internal power
P
I/O
= Power dissipation on input and output pins — user determined
For most applications, P
I/O
<< P
int
and can be neglected. An approximate relationship between P
D
and T
J
(if P
I/O
is neglected) is:
P
D
= K ÷ (T
J
+ 273°C) Eqn. 2
Solving Equation 1 and Equation 2 for K gives:
K = P
D
× (T
A
+ 273°C) + θ
JA
× (P
D
)
2
Eqn. 3
where K is a constant pertaining to the particular part. K can be determined from Equation 3 by measuring
P
D
(at equilibrium) for a known T
A
. Using this value of K, the values of P
D
and T
J
can be obtained by
solving Equation 1 and Equation 2 iteratively for any value of T
A
.
3.4 Electrostatic Discharge (ESD) Protection Characteristics
Although damage from static discharge is much less common on these devices than on early CMOS
circuits, normal handling precautions must be used to avoid exposure to static discharge. Qualification
tests are performed to ensure that these devices can withstand exposure to reasonable levels of static
without suffering any permanent damage. This device was qualified to AEC-Q100 Rev E. A device is
considered to have failed if, after exposure to ESD pulses, the device no longer meets the device
specification requirements. Complete DC parametric and functional testing is performed per the applicable
device specification at room temperature followed by hot temperature, unless specified otherwise in the
device specification.
3.5 DC Characteristics
This section includes information about power supply requirements, I/O pin characteristics, and power
supply current in various operating modes.
Table 5. ESD Protection Characteristics
Parameter Symbol Value Unit
ESD Target for Machine Model (MM) — MM circuit
description
V
THMM
200 V
ESD Target for Human Body Model (HBM) — HBM
circuit description
V
THHBM
2000 V
Table 6. DC Characteristics
Num C Parameter Symbol Min Typical
1
Max Unit
1 Operating voltage
2
— 2.7 — 5.5 V