Datasheet

Appendix A Electrical Characteristics
MC9S08LC60 Series Data Sheet: Technical Data, Rev. 4
Freescale Semiconductor 347
A.11 FLASH Specifications
This section provides details about program/erase times and program-erase endurance for the FLASH
memory.
Program and erase operations do not require any special power sources other than the normal V
DD
supply.
For more detailed information about program/erase operations, see Chapter 4, “Memory.”
Table A-16. FLASH Characteristics
Characteristic Symbol Min Typical Max Unit
Supply voltage for program/erase
V
prog/erase
1.8 3.6 V
Supply voltage for read operation
0 < f
Bus
< 8 MHz
0<f
Bus
< 20 MHz
V
Read
1.8
2.08
3.6
3.6
V
Internal FCLK frequency
(1)
1
The frequency of this clock is controlled by a software setting.
f
FCLK
150 200 kHz
Internal FCLK period (1/FCLK)
t
Fcyc
5 6.67 μs
Byte program time (random
location)
(2)
t
prog
9
t
Fcyc
Byte program time (burst mode)
(2)
t
Burst
4
t
Fcyc
Page erase time
(2)
2
These values are hardware state machine controlled. User code does not need to count cycles. This information
supplied for calculating approximate time to program and erase.
t
Page
4000
t
Fcyc
Mass erase time
(2)
t
Mass
20,000
t
Fcyc
Program/erase endurance
(3)
T
L
to T
H
= –40°C to + 85°C
T = 25°C
3
Typical endurance for FLASH was evaluated for this product family on the 9S12Dx64. For additional
information on how Freescale Semiconductor defines typical endurance, please refer to Engineering Bulletin
EB619/D, Typical Endurance for Nonvolatile Memory.
10,000
100,000
—
—
cycles
Data retention
(4)
4
Typical data retention values are based on intrinsic capability of the technology measured at high temperature
and de-rated to 25°C using the Arrhenius equation. For additional information on how Freescale Semiconductor
defines typical data retention, please refer to Engineering Bulletin EB618/D, Typical Data Retention for
Nonvolatile Memory.
t
D_ret
15 100 — years