Datasheet

Electrical Characteristics
MC9S08LG32 Series Data Sheet, Rev. 9
Freescale Semiconductor 13
2.6 DC Characteristics
This section includes information about power supply requirements and I/O pin characteristics.
Table 7. ESD and Latch-Up Protection Characteristics
No. Rating
1
1
Parameter is achieved by design characterization on a small sample size from typical devices
under typical conditions unless otherwise noted.
Symbol Min Max Unit
1 Human body model (HBM) V
HBM
2500 — V
2 Charge device model (CDM) V
CDM
750 — V
3 Latch-up current at T
A
= 85 CI
LAT
100 — mA
Table 8. DC Characteristics
Num C Characteristic Symbol Min Typ
1
Max Unit
1 — Operating Voltage — 2.7 — 5.5 V
2 P Output high voltage — Low Drive (PTxDSn = 0)
5 V, I
Load = –2 mA
3 V, I
Load = –0.6 mA
V
OH
VDD – 0.8
V
DD – 0.8
—
—
—
—
V
Output high voltage — High Drive (PTxDSn = 1) V
5 V, I
Load = –10 mA
3 V, ILoad = –3 mA
VDD – 0.8
VDD – 0.8
—
—
—
—
3 P Output low voltage — Low Drive (PTxDSn = 0)
5 V, I
Load = 2 mA
3 V, ILoad = 0.6 mA
V
OL
—
—
—
0.8
0.8
V
Output low voltage — High Drive (PTxDSn = 1)
5 V, I
Load = 10 mA
3 V, I
Load = 3 mA
—
—
0.8
0.8
4 P Output high current — Max total I
OH
for all ports
5 V
3 V
I
OHT
——
100
60
mA
5 C Output high current — Max total I
OL
for all ports
5 V
3 V
I
OLT
——
100
60
mA
6 P Bandgap voltage reference V
BG
—1.225— V
7 P Input high voltage; all digital inputs V
IH
0.65 x V
DD
——V
8 P Input low voltage; all digital inputs V
IL
— — 0.35 x V
DD
V
9 P Input hysteresis; all digital inputs V
hys
0.06 x V
DD
——mV
10 P Input leakage current; input only pins
2
V
In
= V
DD
or V
SS
|I
In
|—0.11A
11 P High impedence (off-state) leakage current
V
In
= V
DD
or V
SS
|I
OZ
|—0.11A
12 P Internal pullup resistors
3
R
PU
20 45 65 k
13 P Internal pulldown resistors
4
R
PD
20 45 65 k