Datasheet

MC9S08LG32 Series Data Sheet, Rev. 9
Electrical Characteristics
Freescale Semiconductor18
6 T Stop2 adders: RTC using LPO — n/a 3 210 — nA –40 C to 105 C
RTC using low
power crystal
oscillator
4.25 — A
LCD
2
with rbias
(Low Gain)
1.2
3
—
LCD
2
with rbias
(High Gain)
18
4
—
LCD
2
with Cpump 4.05
3
— –40 C to 85 C
RTC using LPO 5 210 — nA –40 C to 105 C
RTC using low
power crystal
oscillator
4.22 — A
LCD
2
with rbias
(Low Gain)
1.5
3
—
LCD
2
with rbias
(High Gain)
32
4
—
LCD
2
with Cpump 7.12
3
— –40 C to 85 C
7 T Stop3 adders: RTC using LPO — n/a 3 210 — nA –40 C to 105 C
RTC using low
power crystal
oscillator
4.75 — A
LCD
2
with rbias
(Low Gain)
1.2
3
—
LCD
2
with rbias
(High Gain)
18
4
—
LCD
2
with Cpump 4.35
3
— –40 C to 85 C
RTC using LPO 5 230 — nA –40 C to 105 C
RTC using low
power crystal
oscillator
4.74 — A
LCD
2
with rbias
(Low Gain)
1.5
3
—
LCD
2
with rbias
(High Gain)
32
4
—
LCD
2
with Cpump 7.49
3
— –40 C to 85 C
Table 9. Supply Current Characteristics (continued)
Num C Parameter Symbol
Bus
Freq
V
DD
(V)
Typ
1
Max Unit
Temp
(C)