Datasheet
MC9S08LG32 Series Data Sheet, Rev. 9
Electrical Characteristics
Freescale Semiconductor12
where:
T
A
= Ambient temperature, C
JA
= Package thermal resistance, junction-to-ambient, C/W
P
D
= P
int
P
I/O
P
int
= I
DD
V
DD
, Watts — chip internal power
P
I/O
= Power dissipation on input and output pins — user determined
For most applications, P
I/O
P
int
and can be neglected. An approximate relationship between P
D
and T
J
(if P
I/O
is neglected)
is:
P
D
= K (T
J
+ 273 C) Eqn. 2
Solving Equation 1 and Equation 2 for K gives:
K = P
D
(T
A
+ 273C) +
JA
(P
D
)
2
Eqn. 3
where K is a constant pertaining to the particular part. K can be determined from equation 3 by measuring P
D
(at equilibrium)
for a known T
A
. Using this value of K, the values of P
D
and T
J
can be obtained by solving Equation 1 and Equation 2 iteratively
for any value of T
A
.
2.5 ESD Protection and Latch-Up Immunity
Although damage from electrostatic discharge (ESD) is much less common on these devices than on early CMOS circuits,
normal handling precautions should be taken to avoid exposure to static discharge. Qualification tests are performed to ensure
that these devices can withstand exposure to reasonable levels of static without suffering any permanent damage.
All ESD testing is in conformity with AEC-Q100 Stress Test Qualification for automotive grade integrated circuits. During the
device qualification, ESD stresses were performed for the human body model (HBM), the machine model (MM) and the charge
device model (CDM).
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device specification. Complete
DC parametric and functional testing is performed per the applicable device specification at room temperature followed by hot
temperature, unless instructed otherwise in the device specification.
Table 6. ESD and Latch-Up Test Conditions
Model Description Symbol Value
Unit
Human Body
Model
Series resistance R1 1500
Storage capacitance C 100 pF
Number of pulses per pin — 3 —
Latch-up Minimum input voltage limit — –2.5 V
Maximum input voltage limit — 7.5 V
