Datasheet

Memory

9.5.1 Random-access-memory (RAM)

This device contains4,096 byte static RAM and addresses 0x0040 through 0x103F. The

location of the stack RAM is programmable. The 16-bit stack pointer allows the stack to

be anywhere in the 64 KB memory space.

9.5.2 Non-volatile memory (NVM)

The NVM is ideal for single-supply applications allowing for field programming without

requiring external high voltage sources from program or erase operations. The NVM

module includes a memory controller that executes commands to modify NVM contents.

This device contains two types of non-volatile memory: Flash memory and EEPROM.

The Flash is mostly used for the storage of program and constant. The EEPROM is used

for storing frequently modified non-volatile data.

Non-volatile memory (NVM) includes:

• Flash memory

• MC9S08PA60—60,864 bytes: 119 sectors of 512 bytes

• MC9S08PA32—32,768 bytes: 64 sectors of 512 bytes

• EEPROM memory

• MC9S08PA60—256 bytes: 128 sectors of 2 bytes

• MC9S08PA32—256 bytes: 128 sectors of 2 bytes

9.6 Power modules

This device contains on-chip regulator for various operational power modes of run, wait,

and stop3 modes. The low voltage detect (LVD) system allows the system to protect

against low voltage conditions in order to protect memory contents and control MCU

system states during supply voltage variations. The on-chip bandgap reference (≈1.2V),

which is internally connected to ADC channel, provides independent accuracy reference

which will not drop over the full operating voltage even when the operating voltage is

falling.

9.5

1. One of the sectors contains 448 bytes.

Memory

MC9S08PA60 Reference Manual, Rev. 1, 9/2012

224 Freescale Semiconductor, Inc.