Datasheet

Electrical Characteristics
MC9S08QB8 Series MCU Data Sheet, Rev. 3
Freescale Semiconductor 23
3.13 Flash Specifications
This section provides details about program/erase times and program-erase endurance for the flash
memory.
Integral
Non-Linearity
12-bit mode T
INL
— ±1.5 —
LSB
2
10-bit mode
C
— ±0.5 —
8-bit mode — ±0.3 —
Zero-Scale
Error
12-bit mode C
E
ZS
— ±1.5 —
LSB
2
For 28-pin and
24-pin
packages only.
V
ADIN
= V
SSA
10-bit mode P — ±0.5 ±1.5
8-bit mode
T
— ±0.5 ±0.5
Zero-Scale
Error
10-bit mode P
E
ZS
— ±1.5 ±2.1
LSB
2
For 16-pin
package only.
V
ADIN
= V
SSA
8-bit mode T — ±0.5 ±0.7
Full-Scale
Error
12-bit mode T
E
FS
— ±1—
LSB
2
For 28-pin and
24-pin
packages only.
V
ADIN
= V
DDA
10-bit mode P — ±0.5 ±1
8-bit mode
T
— ±0.5 ±0.5
Full-Scale
Error
10-bit mode T
E
FS
— ±1 ±1.5
LSB
2
For 16-pin
package only.
V
ADIN
= V
DDA
8-bit mode T — ±0.5 ±0.5
Quantization
Error
12-bit mode
DE
Q
— –1 to 0 —
LSB
2
10-bit mode — — ±0.5
8-bit mode — — ±0.5
Input Leakage
Error
12-bit mode
DE
IL
— ±1—
LSB
2
Pad leakage
3
*
R
AS
10-bit mode 0 ±0.2 ±4
8-bit mode 0 ±0.1 ±1.2
Temp Sensor
Slope
−40°C– 25°C
Dm
—1.646—
mV/°C
25°C– 85°C — 1.769 —
Temp Sensor
Voltage
25°CDV
TEMP25
—701.2—mV
1
Typical values assume V
DDA
= 3.0 V, Temp = 25 °C, f
ADCK
=1.0 MHz unless otherwise stated. Typical values are for reference
only and are not tested in production.
2
1 LSB = (V
REFH
– V
REFL
)/2
N
3
Based on input pad leakage current. Refer to pad electricals.
Table 16. 12-Bit ADC Characteristics (V
REFH
= V
DDA
, V
REFL
= V
SSA
) (continued)
Characteristic Conditions C Symbol Min Typical
1
Max Unit Comment