Datasheet

Electrical Characteristics
MC9S08QE128 Series Data Sheet, Rev. 7
Freescale Semiconductor 33
3.13 Flash Specifications
This section provides details about program/erase times and program-erase endurance for the flash memory.
Program and erase operations do not require any special power sources other than the normal V
DD
supply. For more detailed
information about program/erase operations, see the Memory section of the MC9S08QE128 Reference Manual.
Table 19. Flash Characteristics
C Characteristic Symbol Min Typical Max Unit
D
Supply voltage for program/erase
-40°C to 85°CV
prog/erase
1.8 3.6 V
D Supply voltage for read operation V
Read
1.8 3.6 V
D Internal FCLK frequency
1
1
The frequency of this clock is controlled by a software setting.
f
FCLK
150 200 kHz
D Internal FCLK period (1/FCLK) t
Fcyc
56.67μs
P Byte program time (random location)
(2)
t
prog
9t
Fcyc
P Byte program time (burst mode)
(2)
t
Burst
4t
Fcyc
P Page erase time
2
2
These values are hardware state machine controlled. User code does not need to count cycles. This information supplied
for calculating approximate time to program and erase.
t
Page
4000 t
Fcyc
P Mass erase time
(2)
t
Mass
20,000 t
Fcyc
Byte program current
3
3
The program and erase currents are additional to the standard run I
DD
. These values are measured at room temperatures
with V
DD
= 3.0 V, bus frequency = 4.0 MHz.
R
IDDBP
—4—mA
Page erase current
3
R
IDDPE
—6—mA
C
Program/erase endurance
4
T
L
to T
H
= –40°C to + 85°C
T = 25°C
4
Typical endurance for flash was evaluated for this product family on the HC9S12Dx64. For additional information on
how Freescale defines typical endurance, please refer to Engineering Bulletin EB619, Typical Endurance for Nonvolatile
Memory.
10,000
—
—
100,000
—
—
cycles
C Data retention
5
5
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and
de-rated to 25°C using the Arrhenius equation. For additional information on how Freescale defines typical data retention,
please refer to Engineering Bulletin EB618, Typical Data Retention for Nonvolatile Memory.
t
D_ret
15 100 — years