Datasheet

Appendix A Electrical Characteristics
MC9S08QG8 and MC9S08QG4 Data Sheet, Rev. 5
Freescale Semiconductor 285
A.11 FLASH Specifications
This section provides details about program/erase times and program-erase endurance for the FLASH
memory.
Program and erase operations do not require any special power sources other than the normal V
DD
supply.
For more detailed information about program/erase operations, see the Memory section.
Table A-15. FLASH Characteristics
Characteristic Symbol Min Typical Max Unit
Supply voltage for program/erase:
T ≤ 85°CV
prog/erase
1.8 — 3.6 V
T > 85 °C 2.1 — 3.6
Supply voltage for read operation V
Read
1.8 — 3.6 V
Internal FCLK frequency
1
1
The frequency of this clock is controlled by a software setting.
f
FCLK
150 — 200 kHz
Internal FCLK period (1/FCLK) t
Fcyc
5 — 6.67 μs
Byte program time (random location)
(2)
t
prog
9t
Fcyc
Byte program time (burst mode)
(2)
t
Burst
4t
Fcyc
Page erase time
2
2
These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for
calculating approximate time to program and erase.
t
Page
4000 t
Fcyc
Mass erase time
(2)
t
Mass
20,000 t
Fcyc
Program/erase endurance
3
T
L
to T
H
= –40°C to + 125°C
T = 25°C
3
Typical endurance for FLASH was evaluated for this product family on the 9S12Dx64. For additional information on how
Motorola defines typical endurance, please refer to Engineering Bulletin EB619/D, Typical Endurance for Nonvolatile Memory.
10,000 —
100,000
—
—
cycles
Data retention
4
4
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
to 25°C using the Arrhenius equation. For additional information on how Motorola defines typical data retention, please refer
to Engineering Bulletin EB618/D, Typical Data Retention for Nonvolatile Memory.
t
D_ret
15 100 — years