Datasheet
Ordering Information
MC9S08SE8 Series MCU Data Sheet, Rev. 3
Freescale Semiconductor 27
3.11 Flash Specifications
This section provides details about program/erase times and program-erase endurance for the flash
memory.
Program and erase operations do not require any special power sources other than the normal V
DD
supply.
For more detailed information about program/erase operations, see the Memory section in the reference
manual.
4 Ordering Information
This chapter contains ordering information for the device numbering system.
Example of the device numbering system:
Table 15. Flash Characteristics
Num C Characteristic Symbol Min Typical Max Unit
1 D Supply voltage for program/erase V
prog/erase
2.7 — 5.5 V
2 D Supply voltage for read operation V
Read
2.7 — 5.5 V
3 D Internal FCLK frequency
1
1
The frequency of this clock is controlled by a software setting.
f
FCLK
150 — 200 kHz
4 D Internal FCLK period (1/FCLK) t
Fcyc
5 — 6.67 μs
5 P Byte program time (random location)
2
2
These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for
calculating approximate time to program and erase.
t
prog
9t
Fcyc
6 P Byte program time (burst mode)
2
t
Burst
4t
Fcyc
7 P Page erase time
2
t
Page
4000 t
Fcyc
8 P Mass erase time
2
t
Mass
20,000 t
Fcyc
9C
Program/erase endurance
3
T
L
to T
H
= –40 °C to 125 °C
T = 25 °C
3
Typical endurance for flash was evaluated for this product family on the 9S12Dx64. For additional information on how
Freescale defines typical endurance, please refer to Engineering Bulletin EB619/D, Typical Endurance for Nonvolatile Memory.
n
FLPE
10,000 —
100,000
— cycles
10 C Data retention
4
4
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
to 25 °C using the Arrhenius equation. For additional information on how Freescale defines typical data retention, please refer
to Engineering Bulletin EB618/D, Typical Data Retention for Nonvolatile Memory.
t
D_ret
15 100 — years
MC
Temperature range
Family
Memory
Status
Core
(C = –40 °C to 85 °C)
(9 = Flash-based)
E9
S08
SE XX
RoHS compliance indicator (E = yes)
(MC = Fully Qualified)
C
Package designator (see Tab l e 16 )
8
Memory Size (in KB)
(V = –40 °C to 105 °C)
(M = –40 °C to 125 °C)