Datasheet

MC9S08SF4 Series MCU Data Sheet, Rev. 4
Flash Specifications
Freescale Semiconductor22
3.12 Flash Specifications
This section provides details about program/erase times and program-erase endurance for the flash
memory.
Program and erase operations do not require any special power sources other than the normal V
DD
supply.
For more detailed information about program/erase operations, see the Memory section.
10 D Programmable reference generator inputs
V
In1
(V
DD50
)
2.7 5.0 5.5 V
11 D Programmable reference generator inputs
V
In2
(V
DD25
)
2.25 2.5 2.75 V
12 C Programmable reference generator step size
V
step
–0.25 0 0.25 LSB
13 P Programmable reference generator voltage range
V
prgout
V
In
/32
—
V
in
V
Table 13. Flash Characteristics
Characteristic Symbol Min Typical Max Unit
Supply voltage for program/erase
–40C to 125C
V
prog/erase
2.7 — 5.5 V
Supply voltage for read operation V
Read
2.7 — 5.5 V
Internal FCLK frequency
1
1
The frequency of this clock is controlled by a software setting.
f
FCLK
150 — 200 kHz
Internal FCLK period (1/FCLK) t
Fcyc
5 — 6.67 s
Byte program time (random location)
(2)
t
prog
9t
Fcyc
Byte program time (burst mode)
(2)
t
Burst
4t
Fcyc
Page erase time
2
2
These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for
calculating approximate time to program and erase.
t
Page
4000 t
Fcyc
Mass erase time
(2)
t
Mass
20,000 t
Fcyc
Program/erase endurance
3
T
L
to T
H
= –40 C to 125 C
T = 25C
3
Typical endurance for flash was evaluated for this product family on the 9S12Dx64. For additional information on how Delta
defines typical endurance, please refer to engineering bulletin Typical Endurance for Nonvolatile Memory (document
EB619/D).
10,000
—
—
100,000
—
—
cycles
Data retention
4
4
Typical data retention values are based on intrinsic capability of the technology measured at a high temperature and de-rated
to 25 C using the Arrhenius equation. For additional information on how Delta defines typical data retention, please refer to
engineering bulletin Typical Data Retention for Nonvolatile Memory (document EB618/D).
t
D_ret
15 100 — years
Table 12. PRACMP Specifications (continued)
Num C Characteristic Symbol Min Typical Max Unit