Datasheet

MC9S08SF4 Series MCU Data Sheet, Rev. 4
DC Characteristics
Freescale Semiconductor8
3.6 DC Characteristics
This section includes information about power supply requirements and I/O pin characteristics.
Table 4. ESD and Latch-up Test Conditions
Model Description Symbol Value Unit
Human
Body
Series resistance R1 1500 
Storage capacitance C 100 pF
Number of pulses per pin — 1
Latch-up
Minimum input voltage limit — –2.5 V
Maximum input voltage limit — 7.5 V
Table 5. ESD and Latch-Up Protection Characteristics
No.
Rating
1
1
Parameter is achieved by design characterization on a small sample size from typical devices
under typical conditions unless otherwise noted.
Symbol Min Max Unit
1 Human body model (HBM)
V
HBM
2000 — V
2 Charge device model (CDM)
V
CDM
500 — V
3
Latch-up current at T
A
= 125 CI
LAT
100 — mA
Table 6. DC Characteristics (Temperature Range = –40 to 125 C Ambient)
Num C Parameter Symbol Min Typical Max Unit
1 P Supply voltage (run, wait, and stop modes.) V
DD
2.7 — 5.5 V
2
P
Low-voltage detection threshold — high range
(V
DD
falling)
(V
DD
rising)
V
LVD H
3.9
4.0
—
—
4.1
4.2
V
V
P
Low-voltage detection threshold — low range
(V
DD
falling)
(V
DD
rising)
V
LVD L
2.48
2.54
2.56
2.62
2.64
2.7
V
V
3
P
Low-voltage warning threshold — high range
(V
DD
falling)
(V
DD
rising)
V
LVW H
2.66
2.72
—
—
2.82
2.88
V
V
P
Low-voltage warning threshold — low range
(V
DD
falling)
(V
DD
rising)
V
LVW L
2.84
2.90
—
—
3.00
3.06
V
V
4D
Low-voltage inhibit reset/recover hysteresis
5 V
3 V
V
hys
—
—
100
60
—
—
mV
mV
5P
Bandgap voltage reference
Factory trimmed at V
DD
= 3.0 V, Temp = 25 CV
BG
1.185 1.200 1.215 V
6P
Input high voltage (2.7 V  V
DD
5.5 V) (all
digital inputs)
V
IH
0.65 × V
DD
—V
DD
+ 0.3 V