Datasheet

Appendix A Electrical Characteristics
MC9S08EL32 Series and MC9S08SL16 Series Data Sheet, Rev. 3
352 Freescale Semiconductor
Figure A-17. SPI Slave Timing (CPHA = 1)
A.13 Flash and EEPROM Specifications
This section provides details about program/erase times and program-erase endurance for the Flash and
EEPROM memory.
Program and erase operations do not require any special power sources other than the normal V
DD
supply.
For more detailed information about program/erase operations, see the Memory section.
Table A-16. Flash Characteristics
Num C Characteristic Symbol Min Typical Max Unit
1 — Supply voltage for program/erase V
prog/erase
2.7 5.5 V
2 — Supply voltage for read operation V
Read
2.7 5.5 V
3 — Internal FCLK frequency
1
f
FCLK
150 200 kHz
4 — Internal FCLK period (1/f
FCLK
)t
Fcyc
56.67μs
5 — Byte program time (random location)
2
t
prog
9t
Fcyc
6 — Byte program time (burst mode)
2
t
Burst
4t
Fcyc
7 — Page erase time
2
t
Page
4000 t
Fcyc
8 — Mass erase time
2
t
Mass
20,000 t
Fcyc
9C
Program/erase endurance
3
T
L
to T
H
= –40°C to +125°C
T = 25°C
n
FLPE
10,000 —
100,000
—
—
cycles
SCK
(INPUT)
SCK
(INPUT)
MOSI
(INPUT)
MISO
(OUTPUT)
MSB IN
BIT 6 . . . 1
LSB IN
MSB OUT
SLAVE LSB OUT
BIT 6 . . . 1
SEE
(CPOL = 0)
(CPOL = 1)
SS
(INPUT)
NOTE:
SLAVE
NOTE
1. Not defined but normally LSB of character just received
1
2
3
4
6
7
8
9
10 11
4
5
5