Datasheet

Chapter 4 Memory
MC9S08EL32 Series and MC9S08SL16 Series Data Sheet, Rev. 3
50 Freescale Semiconductor
The first byte of a series of sequential bytes being programmed in burst mode will take the same amount
of time to program as a byte programmed in standard mode. Subsequent bytes will program in the burst
program time provided that the conditions above are met. If the next sequential address is the beginning
of a new row, the program time for that byte will be the standard time instead of the burst time. This is
because the high voltage to the array must be disabled and then enabled again. If a new burst command
has not been queued before the current command completes, then the charge pump will be disabled and
high voltage removed from the array.
A flowchart to execute the burst program operation is shown in Figure 4-3.
Figure 4-3. Burst Program Flowchart
1
0
FCBEF ?
START
WRITE TO FLASH
TO BUFFER ADDRESS AND DATA
WRITE COMMAND TO FCMD
NO
YES
FPVIOL OR
WRITE 1 TO FCBEF
TO LAUNCH COMMAND
AND CLEAR FCBEF
(2)
NO
YES
NEW BURST COMMAND ?
1
0
FCCF ?
ERROR EXIT
DONE
(2)
Wait at least four bus cycles
before checking FCBEF or FCCF.
1
0
FACCERR ?
CLEAR ERROR
FACCERR ?
WRITE TO FCDIV
(1)
(1)
Required only once
after reset.
BURST PROGRAM
FLOW