Datasheet

MC9S12DT128B Device User Guide — V01.09
A.3.1.3 Sector Erase
Erasing a 512 byte Flash sector or a 4 byte EEPROM sector takes:
The setup times can be ignored for this operation.
A.3.1.4 Mass Erase
Erasing a NVM block takes:
The setup times can be ignored for this operation.
A.3.1.5 Blank Check
The time it takes to perform a blank check on the Flash or EEPROM is dependant on the location of the
first non-blank word starting at relative address zero. It takes one bus cycle per word to verify plus a setup
of the command.
Table A-11 NVM Timing Characteristics
Conditions are shown in Table A-4 unless otherwise noted
Num C Rating Symbol Min Typ Max Unit
1 D External Oscillator Clock
f
NVMOSC
0.5
50
1
NOTES:
1. Restrictions for oscillator in crystal mode apply!
MHz
2 D Bus frequency for Programming or Erase Operations
f
NVMBUS
1 MHz
3 D Operating Frequency
f
NVMOP
150 200 kHz
4 P Single Word Programming Time
t
swpgm
46
2
2. Minimum Programming times are achieved under maximum NVM operating frequency f
NVMOP
and maximum bus frequency
f
bus
.
74.5
3
3. Maximum Erase and Programming times are achieved under particular combinations of f
NVMOP
and bus frequency f
bus
.
Refer to formulae in Sections A.3.1.1 - A.3.1.5 for guidance.
µs
5D
Flash Burst Programming consecutive word
4
t
bwpgm
20.4
2
31
3
µs
6D
Flash Burst Programming Time for 32 Words
4
t
brpgm
678.4
2
1035.5
3
µs
7 P Sector Erase Time
t
era
20
5
26.7
3
ms
8 P Mass Erase Time
t
mass
100
5
133
3
ms
9 D Blank Check Time Flash per block
t
check
11
6
32778
7
t
cyc
10 D Blank Check Time EEPROM per block
t
check
11
6
2058
7
t
cyc
t
era
4000
1
f
NVMOP
---------------------
⋅≈
t
mass
20000
1
f
NVMOP
---------------------
⋅≈
t
check
location t
cyc
10 t
cyc
⋅+⋅≈
Freescale Semiconductor, I
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
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