Datasheet

MC9S12DT128B Device User Guide — V01.09
A.3.2 NVM Reliability
The reliability of the NVM blocks is guaranteed by stress test during qualification, constant process
monitors and burn-in to screen early life failures.
The failure rates for data retention and program/erase cycling are specified at the operating conditions
noted.
The program/erase cycle count on the sector is incremented every time a sector or mass erase event is
executed.
NOTE: All values shown in Table A-12 are target values and subject to further extensive
characterization
Table A-12 NVM Reliability Characteristics
NOTE: Flash cycling performance is 10 cycles at -40˚C to +125˚C. Data retention is
specified for 15 years.
NOTE: EEPROM cycling performance is 10K cycles at -40˚C to 125˚C. Data retention is
specified for 5 years on words after cycling 10K times. However if only 10 cycles
are executed on a word the data retention is specified for 15 years.
4. Burst Programming operations are not applicable to EEPROM
5. Minimum Erase times are achieved under maximum NVM operating frequency f
NVMOP
.
6. Minimum time, if first word in the array is not blank
7. Maximum time to complete check on an erased block
Conditions are shown in Table A-4 unless otherwise noted
Num C Rating Cycles
Data Retention
Lifetime
Unit
1 C Flash/EEPROM (-40˚C to +125˚C)
10
15 Years
2 C EEPROM (-40˚C to +125˚C)
10,000
5 Years
Freescale Semiconductor, I
Freescale Semiconductor, Inc.
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