Datasheet

MC9S12DT128B Device User Guide — V01.09
A device will be defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification. Complete DC parametric and functional testing is performed per the applicable device
specification at room temperature followed by hot temperature, unless specified otherwise in the device
specification.
A.1.7 Operating Conditions
This chapter describes the operating conditions of the device. Unless otherwise noted those conditions
apply to all the following data.
NOTE: Please refer to the temperature rating of the device (C, V, M) with regards to the
ambient temperature T
A
and the junction temperature T
J
. For power dissipation
Table A-2 ESD and Latch-up Test Conditions
Model Description Symbol Value Unit
Human Body
Series Resistance R1 1500 Ohm
Storage Capacitance C 100 pF
Number of Pulse per pin
positive
negative
–
–
3
3
Machine
Series Resistance R1 0 Ohm
Storage Capacitance C 200 pF
Number of Pulse per pin
positive
negative
–
–
3
3
Latch-up
Minimum input voltage limit –2.5 V
Maximum input voltage limit 7.5 V
Table A-3 ESD and Latch-Up Protection Characteristics
Num C Rating Symbol Min Max Unit
1 C Human Body Model (HBM)
V
HBM
2000 – V
2 C Machine Model (MM)
V
MM
200 – V
3 C Charge Device Model (CDM)
V
CDM
500 – V
4C
Latch-up Current at 125°C
positive
negative
I
LAT
+100
–100
–mA
5C
Latch-up Current at 27°C
positive
negative
I
LAT
+200
–200
–mA
Freescale Semiconductor, I
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
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