Datasheet

Appendix A Electrical Characteristics
MC9S12E128 Data Sheet, Rev. 1.07
598 Freescale Semiconductor
Table A-27. Expanded Bus Timing Characteristics (3.3V Range)
Conditions are VDDX=3.3V+/-10%, Junction Temperature -40˚C to +140˚C, C
LOAD
= 50pF
Num C Rating Symbol Min Typ Max Unit
1 P Frequency of operation (E-clock) f
o
0 16.0 MHz
2 P Cycle time t
cyc
62.5 ns
3 D Pulse width, E low PW
EL
30 ns
4 D Pulse width, E high
1
1
Affected by clock stretch: add N x t
cyc
where N=0,1,2 or 3, depending on the number of clock stretches.
PW
EH
30 ns
5 D Address delay time t
AD
16 ns
6 D Address valid time to E rise (PW
EL
–t
AD
)t
AV
16 ns
7 D Muxed address hold time t
MAH
2—ns
8 D Address hold to data valid t
AHDS
7—ns
9 D Data hold to address t
DHA
2—ns
10 D Read data setup time t
DSR
15 ns
11 D Read data hold time t
DHR
0—ns
12 D Write data delay time t
DDW
15 ns
13 D Write data hold time t
DHW
2—ns
14 D Write data setup time
1
(PW
EH
–t
DDW
)t
DSW
15 ns
15 D Address access time
1
(t
cyc
–t
AD
–t
DSR
)t
ACCA
29 ns
16 D E high access time
1
(PW
EH
–t
DSR
)t
ACCE
15 ns
17 D Non-multiplexed address delay time t
NAD
14 ns
18 D Non-muxed address valid to E rise (PW
EL
–t
NAD
)t
NAV
16 ns
19 D Non-multiplexed address hold time t
NAH
2—ns
20 D Chip select delay time t
CSD
25 ns
21 D Chip select access time
1
(t
cyc
–t
CSD
–t
DSR
)t
ACCS
22.5 ns
22 D Chip select hold time t
CSH
2—ns
23 D Chip select negated time t
CSN
8—ns
24 D Read/write delay time t
RWD
14 ns
25 D Read/write valid time to E rise (PW
EL
–t
RWD
)t
RWV
16 ns
26 D Read/write hold time t
RWH
2—ns
27 D Low strobe delay time t
LSD
14 ns
28 D Low strobe valid time to E rise (PW
EL
–t
LSD
)t
LSV
16 ns
29 D Low strobe hold time t
LSH
2—ns
30 D NOACC strobe delay time t
NOD
14 ns
31 D NOACC valid time to E rise (PW
EL
–t
NOD
)t
NOV
16 ns
32 D NOACC hold time t
NOH
2—ns
33 D IPIPO[1:0] delay time t
P0D
2 14 ns
34 D IPIPO[1:0] valid time to E rise (PW
EL
–t
P0D
)t
P0V
16 ns
35 D IPIPO[1:0] delay time
1
(PW
EH
-t
P1V
)t
P1D
2—25ns
36 D IPIPO[1:0] valid time to E fall t
P1V
11 ns