Datasheet

MC9S12E128 Data Sheet, Rev. 1.07
Freescale Semiconductor 85
Chapter 2
128 Kbyte Flash Module (FTS128K1V1)
2.1 Introduction
The FTS128K1 module implements a 128 Kbyte Flash (nonvolatile) memory. The Flash memory contains
one array of 128 Kbytes organized as 1024 rows of 128 bytes with an erase sector size of eight rows (1024
bytes). The Flash array may be read as either bytes, aligned words, or misaligned words. Read access time
is one bus cycle for byte and aligned word, and two bus cycles for misaligned words.
The Flash array is ideal for program and data storage for single-supply applications allowing for field
reprogramming without requiring external voltage sources for program or erase. Program and erase
functions are controlled by a command driven interface. The Flash module supports both mass erase and
sector erase. An erased bit reads 1 and a programmed bit reads 0. The high voltage required to program
and erase is generated internally. It is not possible to read from a Flash array while it is being erased or
programmed.
CAUTION
A Flash word must be in the erased state before being programmed.
Cumulative programming of bits within a Flash word is not allowed.
2.1.1 Glossary
Command Write Sequence — A three-step MCU instruction sequence to program, erase, or erase verify
the Flash array memory.
2.1.2 Features
• 128 Kbytes of Flash memory comprised of one 128 Kbyte array divided into 128 sectors of 1024
bytes
• Automated program and erase algorithm
• Interrupts on Flash command completion and command buffer empty
• Fast sector erase and word program operation
• 2-stage command pipeline for faster multi-word program times
• Flexible protection scheme to prevent accidental program or erase
• Single power supply for Flash program and erase operations
• Security feature to prevent unauthorized access to the Flash array memory