Datasheet

Appendix A Electrical Characteristics
MC9S12XDP512 Data Sheet, Rev. 2.21
1242 Freescale Semiconductor
specification at room temperature followed by hot temperature, unless specified otherwise in the device
specification.
Table A-2. ESD and Latch-up Test Conditions
Model Description Symbol Value Unit
Human Body Series resistance R1 1500 Ohm
Storage capacitance C 100 pF
Number of pulse per pin
Positive
Negative
—
—
3
3
Latch-up Minimum input voltage limit –2.5 V
Maximum input voltage limit 7.5 V
Table A-3. ESD and Latch-Up Protection Characteristics
Num C Rating Symbol Min Max Unit
1 C Human Body Model (HBM) V
HBM
2000 — V
2 C Charge Device Model (CDM) V
CDM
500 — V
3 C Latch-up current at T
A
= 125°C
Positive
Negative
I
LAT
+100
–100
—
—
mA
4 C Latch-up current at T
A
= 27°C
Positive
Negative
I
LAT
+200
–200
—
—
mA