Datasheet

Appendix A Electrical Characteristics
MC9S12XE-Family Reference Manual Rev. 1.25
1232 Freescale Semiconductor
The standard shipping condition for both the D-Flash and P-Flash memory is erased with security disabled.
However it is recommended that each block or sector is erased before factory programming to ensure that
the full data retention capability is achieved. Data retention time is measured from the last erase operation.
Table A-20. NVM Reliability Characteristics
Conditions are shown in Table A-4 unless otherwise noted
Num C Rating Symbol Min Typ Max Unit
P-Flash Arrays
1 C Data retention at an average junction temperature of T
Javg
=
85°C
(1)
after up to 10,000 program/erase cycles
1. T
Javg
does not exceed 85°C in a typical temperature profile over the lifetime of a consumer, industrial or automotive
application.
t
PNVMRET
15 100
(2)
2. Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
to 25°C using the Arrhenius equation. For additional information on how Freescale defines Typical Data Retention, please
refer to Engineering Bulletin EB618
— Years
2 C Data retention at an average junction temperature of T
Javg
=
85°C
(3)
after less than 100 program/erase cycles
3. T
Javg
does not exceed 85°C in a typical temperature profile over the lifetime of a consumer, industrial or automotive
application.
t
PNVMRET
20 100
2
— Years
3 C P-Flash number of program/erase cycles
(-40°C ≤ tj ≤ 150°C)
n
PFLPE
10K 100K
3
— Cycles
D-Flash Array
4 C Data retention at an average junction temperature of T
Javg
=
85°C
3
after up to 50,000 program/erase cycles
t
DNVMRET
5 100
2
— Years
5 C Data retention at an average junction temperature of T
Javg
=
85°C
3
after less than 10,000 program/erase cycles
t
DNVMRET
10 100
2
— Years
6 C Data retention at an average junction temperature of T
Javg
=
85°C
3
after less than 100 program/erase cycles
t
DNVMRET
20 100
2
— Years
7 C D-Flash number of program/erase cycles (-40°C ≤ tj ≤ 150°C) n
DFLPE
50K 500K
3
— Cycles
Emulated EEPROM
8 C Data retention at an average junction temperature of T
Javg
=
85°C
1
after spec. program/erase cycles
t
EENVMRET
5
4
100
2
— Years
9 C Data retention at an average junction temperature of T
Javg
=
85°C
3
after less than 20% spec.program/erase cycles.
(e.g. after <20,000 cycles / Spec 100,000 cycles)
t
EENVMRET
10 100
2
— Years
10 C Data retention at an average junction temperature of T
Javg
=
85°C
3
after less than 0.2% spec. program/erase cycles
(e.g. after < 200 cycles / Spec 100,000 cycles)
t
EENVMRET
20 100
2
— Years
11 C EEPROM number of program/erase cycles with a ratio of
EEE_NVM to EEE_RAM = 8 (-40°C ≤ tj ≤ 150°C)
n
EEPE
100K
(4)
4. This represents the number of writes of updated data words to the EEE_RAM partition. Minimum specification (endurance
and data retention) of the Emulated EEPROM array is based on the minimum specification of the D-Flash array per item 6.
1M
(5)
— Cycles
12 C EEPROM number of program/erase cycles with a ratio of
EEE_NVM to EEE_RAM = 128 (-40°C ≤ tj ≤ 150°C)
n
EEPE
3M
4
30M
5
— Cycles
13 C EEPROM number of program/erase cycles with a ratio of
EEE_NVM to EEE_RAM = 16384
(6)
(-40°C ≤ tj ≤ 150°C)
n
EEPE
325M
4
3.2G
5
— Cycles