Datasheet

Chapter 26 384 KByte Flash Module (S12XFTM384K2V1)
MC9S12XE-Family Reference Manual Rev. 1.25
994 Freescale Semiconductor
26.4.2.6 Program P-Flash Command
The Program P-Flash operation will program a previously erased phrase in the P-Flash memory using an
embedded algorithm.
CAUTION
A P-Flash phrase must be in the erased state before being programmed.
Cumulative programming of bits within a Flash phrase is not allowed.
Upon clearing CCIF to launch the Program P-Flash command, the Memory Controller will program the
data words to the supplied global address and will then proceed to verify the data words read back as
expected. The CCIF flag will set after the Program P-Flash operation has completed.
Table 26-42. Load Data Field Command Error Handling
Register Error Bit Error Condition
FSTAT
ACCERR
Set if CCOBIX[2:0] != 101 at command launch
Set if command not available in current mode (see Table 26-30)
Set if an invalid global address [22:0] is supplied
(1)
1. As defined by the memory map for FTM512K3.
Set if a misaligned phrase address is supplied (global address [2:0] != 000)
Set if a Load Data Field command sequence is currently active and the selected
block has previously been selected in the same command sequence
Set if a Load Data Field command sequence is currently active and global
address [17:0] does not match that previously supplied in the same command
sequence
FPVIOL Set if the global address [22:0] points to a protected area
MGSTAT1 None
MGSTAT0 None
FERSTAT EPVIOLIF None
Table 26-43. Program P-Flash Command FCCOB Requirements
CCOBIX[2:0] FCCOB Parameters
000 0x06
Global address [22:16] to
identify P-Flash block
001 Global address [15:0] of phrase location to be programmed
(1)
1. Global address [2:0] must be 000
010 Word 0 program value
011 Word 1 program value
100 Word 2 program value
101 Word 3 program value