Datasheet

Appendix A Electrical Characteristics
MC9S12XE-Family Reference Manual Rev. 1.25
Freescale Semiconductor 1225
A.3.1.4 Read Once (FCMD=0x04)
The maximum read once time is given by
A.3.1.5 Load Data Field (FCMD=0x05)
The maximum load data field time is given by
A.3.1.6 Program P-Flash (FCMD=0x06)
The programming time for a single phrase of four P-Flash words + associated eight ECC bits is dependant
on the bus frequency as a well as on the frequency f
NVMOP
and can be calculated according to the
following formulas, whereby N
DLOAD
is the number of extra blocks being programmed by the Load Data
Field command (DLOAD), i.e. programming 2,3,4 blocks using DLOAD, N
DLOAD
=1,2,3 respectively.
The typical phrase programming time can be calculated using the following equation
The maximum phrase programming time can be calculated using the following equation
A.3.1.7 P-Flash Program Once (FCMD=0x07)
The maximum P-Flash Program Once time is given by
A.3.1.8 Erase All Blocks (FCMD=0x08)
For S12XEP100, S12XEP768, S12XEQ512 and S12XEQ384 erasing all blocks takes:
For S12XET256, S12XEA256 and S12XEG128 erasing all blocks takes:
t 400()
1
f
NVMBUS
----------------------
⋅=
t 450()
1
f
NVMBUS
----------------------
⋅=
t
bwpgm
128 12 N
DLOAD
⋅()+()
1
f
NVMOP
-------------------------
1725 510 N
DLOAD
⋅()+()
1
f
NVMBUS
-----------------------------
⋅+⋅=
t
bwpgm
130 14 N
DLOAD
⋅()+()
1
f
NVMOP
-------------------------
2125 510 N
DLOAD
⋅()+()
1
f
NVMBUS
-----------------------------
⋅+⋅=
t
bwpgm
162
1
f
NVMOP
-------------------------
2400
1
f
NVMBUS
-----------------------------
⋅+⋅≈
t
mass
100100
1
f
NVMOP
-------------------------
70000
1
f
NVMBUS
-----------------------------
⋅+⋅≈
t
mass
100100
1
f
NVMOP
-------------------------
35000
1
f
NVMBUS
-----------------------------
⋅+⋅≈