Datasheet

Chapter 24 128 KByte Flash Module (S12XFTM128K2V1)
MC9S12XE-Family Reference Manual Rev. 1.25
834 Freescale Semiconductor
• Single bit fault correction and double bit fault detection within a word during read operations
• Automated program and erase algorithm with verify and generation of ECC parity bits
• Fast sector erase and word program operation
• Ability to program up to four words in a burst sequence
24.1.2.3 Emulated EEPROM Features
• Up to 2 Kbytes of emulated EEPROM (EEE) accessible as 2 Kbytes of RAM
• Flexible protection scheme to prevent accidental program or erase of data
• Automatic EEE file handling using an internal Memory Controller
• Automatic transfer of valid EEE data from D-Flash memory to buffer RAM on reset
• Ability to monitor the number of outstanding EEE related buffer RAM words left to be
programmed into D-Flash memory
• Ability to disable EEE operation and allow priority access to the D-Flash memory
• Ability to cancel all pending EEE operations and allow priority access to the D-Flash memory
24.1.2.4 User Buffer RAM Features
• Up to 2 Kbytes of RAM for user access
24.1.2.5 Other Flash Module Features
• No external high-voltage power supply required for Flash memory program and erase operations
• Interrupt generation on Flash command completion and Flash error detection
• Security mechanism to prevent unauthorized access to the Flash memory
24.1.3 Block Diagram
The block diagram of the Flash module is shown in Figure 24-1.