Datasheet

256 KByte Flash Module (S12XFTMR256K1V1)
S12XS Family Reference Manual, Rev. 1.13
542 Freescale Semiconductor
Upon clearing CCIF to launch the Erase Verify P-Flash Section command, the Memory Controller will
verify the selected section of Flash memory is erased. The CCIF flag will set after the Erase Verify P-Flash
Section operation has completed.
18.4.2.4 Read Once Command
The Read Once command provides read access to a reserved 64 byte field (8 phrases) located in the
nonvolatile information register of P-Flash block 0. The Read Once field is programmed using the
Program Once command described in Section 18.4.2.6. The Read Once command must not be executed
from the Flash block containing the Program Once reserved field to avoid code runaway.
Upon clearing CCIF to launch the Read Once command, a Read Once phrase is fetched and stored in the
FCCOB indexed register. The CCIF flag will set after the Read Once operation has completed. Valid
Table 18-35. Erase Verify P-Flash Section Command FCCOB Requirements
CCOBIX[2:0] FCCOB Parameters
000 0x03
Global address [22:16] of
a P-Flash block
001 Global address [15:0] of the first phrase to be verified
010 Number of phrases to be verified
Table 18-36. Erase Verify P-Flash Section Command Error Handling
Register Error Bit Error Condition
FSTAT
ACCERR
Set if CCOBIX[2:0] != 010 at command launch
Set if command not available in current mode (see Table 18-28)
Set if an invalid global address [22:0] is supplied
Set if a misaligned phrase address is supplied (global address [2:0] != 000)
Set if the requested section crosses a 256 Kbyte boundary
FPVIOL None
MGSTAT1 Set if any errors have been encountered during the read
MGSTAT0 Set if any non-correctable errors have been encountered during the read
Table 18-37. Read Once Command FCCOB Requirements
CCOBIX[2:0] FCCOB Parameters
000 0x04 Not Required
001 Read Once phrase index (0x0000 - 0x0007)
010 Read Once word 0 value
011 Read Once word 1 value
100 Read Once word 2 value
101 Read Once word 3 value