Datasheet

256 KByte Flash Module (S12XFTMR256K1V1)
S12XS Family Reference Manual, Rev. 1.13
Freescale Semiconductor 551
Upon clearing CCIF to launch the Erase Verify D-Flash Section command, the Memory Controller will
verify the selected section of D-Flash memory is erased. The CCIF flag will set after the Erase Verify
D-Flash Section operation has completed.
18.4.2.15 Program D-Flash Command
The Program D-Flash operation programs one to four previously erased words in the D-Flash block. The
Program D-Flash operation will confirm that the targeted location(s) were successfully programmed upon
completion.
CAUTION
A Flash word must be in the erased state before being programmed.
Cumulative programming of bits within a Flash word is not allowed.
Table 18-59. Erase Verify D-Flash Section Command FCCOB Requirements
CCOBIX[2:0] FCCOB Parameters
000 0x10
Global address [22:16] to
identify the D-Flash block
001 Global address [15:0] of the first word to be verified
010 Number of words to be verified
Table 18-60. Erase Verify D-Flash Section Command Error Handling
Register Error Bit Error Condition
FSTAT
ACCERR
Set if CCOBIX[2:0] != 010 at command launch
Set if command not available in current mode (see Table 18-28)
Set if an invalid global address [22:0] is supplied
Set if a misaligned word address is supplied (global address [0] != 0)
Set if the requested section breaches the end of the D-Flash block
FPVIOL None
MGSTAT1 Set if any errors have been encountered during the read
MGSTAT0 Set if any non-correctable errors have been encountered during the read
Table 18-61. Program D-Flash Command FCCOB Requirements
CCOBIX[2:0] FCCOB Parameters
000 0x11
Global address [22:16] to
identify the D-Flash block
001 Global address [15:0] of word to be programmed
010 Word 0 program value
011 Word 1 program value, if desired
100 Word 2 program value, if desired