Datasheet

64 KByte Flash Module (S12XFTMR64K1V1)
S12XS Family Reference Manual, Rev. 1.13
Freescale Semiconductor 651
NOTE
Field margin levels can be used to check that Flash memory contents have
adequate margin for data retention at the normal level setting. If unexpected
results are encountered when checking Flash memory contents at field
margin levels, the Flash memory contents should be erased and
reprogrammed.
20.4.2.14 Erase Verify D-Flash Section Command
The Erase Verify D-Flash Section command will verify that a section of code in the D-Flash is erased. The
Erase Verify D-Flash Section command defines the starting point of the data to be verified and the number
of words.
Upon clearing CCIF to launch the Erase Verify D-Flash Section command, the Memory Controller will
verify the selected section of D-Flash memory is erased. The CCIF flag will set after the Erase Verify
D-Flash Section operation has completed.
20.4.2.15 Program D-Flash Command
The Program D-Flash operation programs one to four previously erased words in the D-Flash block. The
Program D-Flash operation will confirm that the targeted location(s) were successfully programmed upon
completion.
Table 20-59. Erase Verify D-Flash Section Command FCCOB Requirements
CCOBIX[2:0] FCCOB Parameters
000 0x10
Global address [22:16] to
identify the D-Flash block
001 Global address [15:0] of the first word to be verified
010 Number of words to be verified
Table 20-60. Erase Verify D-Flash Section Command Error Handling
Register Error Bit Error Condition
FSTAT
ACCERR
Set if CCOBIX[2:0] != 010 at command launch
Set if command not available in current mode (see Table 20-28)
Set if an invalid global address [22:0] is supplied
Set if a misaligned word address is supplied (global address [0] != 0)
Set if the requested section breaches the end of the D-Flash block
FPVIOL None
MGSTAT1 Set if any errors have been encountered during the read
MGSTAT0 Set if any non-correctable errors have been encountered during the read