Datasheet

Electrical Characteristics
S12XS Family Reference Manual, Rev. 1.13
Freescale Semiconductor 661
A.1.7 Operating Conditions
This section describes the operating conditions of the device. Unless otherwise noted those conditions
apply to all the following data.
NOTE
Please refer to the temperature rating of the device (C, V, M) with regards to
the ambient temperature T
A
and the junction temperature T
J
. For power
dissipation calculations refer to Section A.1.8, “Power Dissipation and
Thermal Characteristics”.
Table A-2. ESD and Latch-up Test Conditions
Model Description Symbol Value Unit
Human Body Series resistance R1 1500 Ohm
Storage capacitance C 100 pF
Number of pulse per pin
Positive
Negative
—
—
1
1
Charged Device Number of pulse per pin
Positive
Negative
—
—
3
3
Latch-up Minimum input voltage limit — –2.5 V
Maximum input voltage limit — 7.5 V
Table A-3. ESD and Latch-Up Protection Characteristics
Num C Rating Symbol Min Max Unit
1 C Human Body Model (HBM) V
HBM
2000 — V
2 C Charge Device Model (CDM) corner pins
Charge Device Model (CDM) edge pins
V
CDM
750
500
—
—
V
3 C Latch-up current at T
A
= 125°C
Positive
Negative
I
LAT
+100
–100
—
—
mA
4 C Latch-up current at T
A
= 27°C
Positive
Negative
I
LAT
+200
–200
—
—
mA
Table A-4. Operating Conditions
Rating Symbol Min Typ Max Unit
I/O, regulator and analog supply voltage V
DD35
3.13 5 5.5 V
NVM logic supply voltage
1
V
DDF
2.7 2.8 2.98 V
Voltage difference V
DDX
to V
DDA
∆
VDDX
refer to Table A-14