Datasheet

Electrical Characteristics
S12XS Family Reference Manual, Rev. 1.13
682 Freescale Semiconductor
A.3.1.14 Erase Verify D-Flash Section (FCMD=0x10)
Erase Verify D-Flash for a given number of words N
W
is given by .
A.3.1.15 D-Flash Programming (FCMD=0x11)
D-Flash programming time is dependent on the number of words being programmed and their location
with respect to a row boundary, because programming across a row boundary requires extra steps. The D-
Flash programming time is specified for different cases (1,2,3,4 words and 4 words across a row boundary)
at a 40MHz bus frequency. The typical programming time can be calculated using the following equation,
whereby N
w
denotes the number of words; BC=0 if no boundary is crossed and BC=1 if a boundary is
crossed.
The maximum programming time can be calculated using the following equation
A.3.1.16 Erase D-Flash Sector (FCMD=0x12)
Typical D-Flash sector erase times are those expected on a new device, where no margin verify fails occur.
They can be calculated using the following equation.
Maximum D-Fash sector erase times can be calculated using the following equation.
The D-Flash sector erase time on a new device is ~5ms and can extend to 20ms as the flash is cycled.
t 350
1
f
NVMBUS
----------------------------
⋅=
t
check
840 N
W
+()
1
f
NVMBUS
----------------------------
⋅≈
t
dpgm
15 54 N
w
⋅()16 BC⋅()++()
1
f
NVMOP
-------------------
⋅
⎝⎠
⎛⎞
460 640 N
W
⋅()500 BC⋅()++()
1
f
NVMBUS
---------------------
⋅
⎝⎠
⎛⎞
+=
t
dpgm
15 56 N
w
⋅()16 BC⋅()++()
1
f
NVMOP
-------------------
⋅
⎝⎠
⎛⎞
460 840 N
W
⋅()500 BC⋅()++()
1
f
NVMBUS
---------------------
⋅
⎝⎠
⎛⎞
+=
t
eradf
5025
1
f
NVMOP
-------------------------
700
1
f
NVMBUS
----------------------------
⋅+⋅≈
t
eradf
20100
1
f
NVMOP
-------------------------
3300
1
f
NVMBUS
----------------------------
⋅+⋅≈