Datasheet

Electrical Characteristics
S12XS Family Reference Manual, Rev. 1.13
684 Freescale Semiconductor
Table A-19. NVM Reliability Characteristics
Conditions are shown in Table A-4 unless otherwise noted
Num C Rating Symbol Min Typ Max Unit
P-Flash Array
1 C Data retention at an average junction temperature of T
Javg
=
85°C
1
after up to 10,000 program/erase cycles
1
T
Javg
does not exceed 85°C in a typical temperature profile over the lifetime of a consumer, industrial or automotive
application.
t
PNVMRET
15 100
2
2
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
to 25°C using the Arrhenius equation. For additional information on how Freescale defines Typical Data Retention, please
refer to Engineering Bulletin EB618
— Years
2 C Data retention at an average junction temperature of T
Javg
=
85°C
3
after less than 100 program/erase cycles
3
T
Javg
does not exceed 85°C in a typical temperature profile over the lifetime of a consumer, industrial or automotive
application.
t
PNVMRET
20 100
2
— Years
3 C P-Flash number of program/erase cycles
(-40°C ≤ tj ≤ 150°C)
n
PFLPE
10K 100K
3
— Cycles
D-Flash Array
4 C Data retention at an average junction temperature of T
Javg
=
85°C
3
after up to 50,000 program/erase cycles
t
DNVMRET
5 100
2
— Years
5 C Data retention at an average junction temperature of T
Javg
=
85°C
3
after less than 10,000 program/erase cycles
t
DNVMRET
10 100
2
— Years
6 C Data retention at an average junction temperature of T
Javg
=
85°C
3
after less than 100 program/erase cycles
t
DNVMRET
20 100
2
— Years
7 C D-Flash number of program/erase cycles (-40°C ≤ tj ≤ 150°C) n
DFLPE
50K 500K
3
— Cycles