Datasheet
Bus Operation
6-74  MCF5206e USER’S MANUAL MOTOROLA
the transfer. If TA is negated, the external master continues to output the data and inserts 
wait states instead of terminating the transfer. The external master must continue to 
sample TA on successive rising edges of CLK until it is asserted.
Clock 4 (C4)
During C4, the external master places the data bus in a high-impedence state. The 
MCF5206e negates TA and drives TA to a high impedence state after the next rising edge 
of CLK.
6.10.3 External Master Bursting Read Using MCF5206e-Generated 
Transfer Termination
The bursting read transfer of an external master transfer using MCF5206e-generated 
termination is similar to a ColdFire core initiated bursting transfer with the exception that 
one additional CLK cycle is inserted between the assertion of TS by the external master 
and the starting of the internal wait state counter by the MCF5206e. If the transfer is to 
default memory, the external master must increment the address to the appropriate value 
after each assertion of transfer acknowledge. For more information on chip select 
transfers, refer to Section 8 Chip Selects. For more information on DRAM transfers, refer 
to Section 10 DRAM Controller.
NOTE
An external master cannot initiate a bursting read transfer for
a chip select or default memory space where the burst-enable
bit (BRST) in the Chip Select Control Register (CSCR) or the
Default Memory Control Register (DMCR) is cleared.
Undefined behavior occurs if you attempt such a transfer.
Figure 6-45 is a flowchart for an external master bursting read transfer using MCF5206e- 
generated automatic acknowledge to access 8-, 16-, or 32-bit ports. Bus operations are 
similar for each case and vary only with the size indicated, the portion of the data bus used 
for the transfer, and the specific number of cycles needed for each transfer. A bursting 
read transfer can be from two to sixteen transfers long. The flowchart in Figure 6-45 is for 
a bursting transfer four transfers long.
Fr
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Freescale Semiconductor, Inc.
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