Datasheet

Electrical Characteristics
MCF5213 ColdFire Microcontroller, Rev. 3
Freescale Semiconductor 31
2.5 ESD Protection
2.6 DC Electrical Specifications
Table 25. ESD Protection Characteristics
1, 2
1
All ESD testing is in conformity with CDF-AEC-Q100 Stress Test Qualification for
Automotive Grade Integrated Circuits.
2
A device is defined as a failure if after exposure to ESD pulses the device no longer
meets the device specification requirements. Complete DC parametric and functional
testing is performed per applicable device specification at room temperature followed by
hot temperature, unless specified otherwise in the device specification.
Characteristics
Symbol Value Units
ESD target for Human Body Model HBM 2000 V
ESD target for Machine Model MM 200 V
HBM circuit description R
series
1500 Ω
C 100 pF
MM circuit description R
series
0 Ω
C 200 pF
Number of pulses per pin (HBM)
• Positive pulses
• Negative pulses
—
—
1
1
—
Number of pulses per pin (MM)
• Positive pulses
• Negative pulses
—
—
3
3
—
Interval of pulses — 1 sec
Table 26. DC Electrical Specifications
1
Characteristic Symbol Min Max Unit
Supply voltage V
DD
3.0 3.6 V
Standby voltage V
STBY
3.0 3.6 V
Input high voltage V
IH
0.7 × V
DD
4.0 V
Input low voltage V
IL
V
SS
– 0.3 0.35 × V
DD
V
Input hysteresis V
HYS
0.06 × V
DD
—mV
Low-voltage detect trip voltage (V
DD
falling) V
LVD
2.15 2.3 V
Low-voltage detect hysteresis (V
DD
rising) V
LVD HYS
60 120 mV
Input leakage current
V
in
= V
DD
or V
SS
, digital pins
I
in
–1.0 1.0 μA
Output high voltage (all input/output and all output pins)
I
OH
= –2.0 mA
V
OH
V
DD
– 0.5 — V
Output low voltage (all input/output and all output pins)
I
OL
= 2.0mA
V
OL
—0.5V