Datasheet

MCF5213 ColdFire Microcontroller, Rev. 3
Electrical Characteristics
Freescale Semiconductor30
2.4 Flash Memory Characteristics
The flash memory characteristics are shown in Table 23 and Table 24.
The average chip-junction temperature (T
J
) in °C can be obtained from:
(1)
Where:
T
A
= ambient temperature, °C
Θ
JA
= package thermal resistance, junction-to-ambient, °C/W
P
D
= P
INT
+ P
I/O
P
INT
= chip internal power, I
DD
× V
DD
, watts
P
I/O
= power dissipation on input and output pins — user determined, watts
For most applications P
I/O
< P
INT
and can be ignored. An approximate relationship between P
D
and T
J
(if P
I/O
is neglected) is:
(2)
Solving equations 1 and 2 for K gives:
K = P
D
× (T
A
+ 273 °C) + Θ
JMA
× P
D
2
(3)
where K is a constant pertaining to the particular part. K can be determined from equation (3) by measuring P
D
(at equilibrium)
for a known T
A
. Using this value of K, the values of P
D
and T
J
can be obtained by solving equations (1) and (2) iteratively for
any value of T
A
.
Table 23. SGFM Flash Program and Erase Characteristics
(V
DDF
= 2.7 to 3.6 V)
Parameter Symbol Min Typ Max Unit
System clock (read only) f
sys(R)
0—66.67 or 80
1
1
Depending on packaging; see Ta bl e 2 .
MHz
System clock (program/erase)
2
2
Refer to the flash memory section for more information
f
sys(P/E)
0.15 — 66.67 or 80
1
MHz
Table 24. SGFM Flash Module Life Characteristics
(V
DDF
= 2.7 to 3.6 V)
Parameter Symbol Value Unit
Maximum number of guaranteed program/erase cycles
1
before failure
1
A program/erase cycle is defined as switching the bits from 1 → 0 → 1.
P/E 10,000
2
2
Reprogramming of a flash memory array block prior to erase is not required.
Cycles
Data retention at average operating temperature of 85°C Retention 10 Years
T
J
T
A
P
D
Θ
JMA
×()+=
P
D
KT
J
273°C+()÷=