Datasheet

MCF5227x ColdFire
®
Microprocessor Data Sheet, Rev. 8
Electrical Characteristics
Freescale Semiconductor18
5.3 ESD Protection
5.4 DC Electrical Specifications
Table 9. ESD Protection Characteristics
1,2
1
All ESD testing is in conformity with CDF-AEC-Q100 Stress Test Qualification for Automotive Grade
Integrated Circuits.
2
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification requirements. Complete DC parametric and functional testing is performed per
applicable device specification at room temperature followed by hot temperature, unless specified
otherwise in the device specification.
Characteristic Symbol Value Unit
ESD Target for Human Body Model HBM 2000 V
Table 10. DC Electrical Specifications
Characteristic Symbol Min Max Unit
Core Supply Voltage IV
DD
1.4 1.6 V
PLL Supply Voltage PLLV
DD
1.4 1.6 V
RTC Supply Voltage RTCV
DD
1.4 1.6 V
CMOS Pad Supply Voltage EV
DD
3.0 3.6 V
SDRAM and FlexBus Supply Voltage
Mobile DDR/Bus Pad Supply Voltage (nominal 1.8V)
DDR/Bus Pad Supply Voltage (nominal 2.5V)
SDR/Bus Pad Supply Voltage (nominal 3.3V)
SDV
DD
1.7
2.25
3.0
1.95
2.75
3.6
V
USB Supply Voltage USBV
DD
3.0 3.6 V
Oscillator Supply Voltage OSCV
DD
3.0 3.6 V
CMOS Input High Voltage EV
IH
2EV
DD
+0.3 V
CMOS Input Low Voltage EV
IL
V
SS
– 0.3 0.8 V
CMOS Output High Voltage
I
OH
= –5.0 mA
EV
OH
EV
DD
– 0.4 — V
CMOS Output Low Voltage
I
OL
= 5.0 mA
EV
OL
—0.4V
SDRAM and FlexBus Input High Voltage
Mobile DDR/Bus Input High Voltage (nominal 1.8V)
DDR/Bus Pad Supply Voltage (nominal 2.5V)
SDR/Bus Pad Supply Voltage (nominal 3.3V)
SDV
IH
1.35
1.7
2
SDV
DD
+0.3
SDV
DD
+0.3
SDV
DD
+0.3
V
SDRAM and FlexBus Input Low Voltage
Mobile DDR/Bus Input High Voltage (nominal 1.8V)
DDR/Bus Pad Supply Voltage (nominal 2.5V)
SDR/Bus Pad Supply Voltage (nominal 3.3V)
SDV
IL
V
SS
– 0.3
V
SS
– 0.3
V
SS
– 0.3
0.45
0.8
0.8
V