Datasheet
Table Of Contents
- MCF5441x ColdFire Microprocessor Data Sheet
- 1 MCF5441x family comparison
- 2 Hardware design considerations
- 3 Pin assignments and reset states
- 4 Electrical characteristics
- 4.1 Absolute maximum ratings
- 4.2 Thermal characteristics
- 4.3 ESD protection
- 4.4 Static latch-up (LU)
- 4.5 DC electrical specifications
- 4.6 Output pad loading and slew rate
- 4.7 DDR pad drive strengths
- 4.8 Oscillator and PLL electrical characteristics
- 4.9 Reset timing specifications
- 4.10 FlexBus timing specifications
- 4.11 NAND flash controller (NFC) timing specifications
- 4.12 DDR SDRAM controller timing specifications
- 4.13 USB transceiver timing specifications
- 4.14 ULPI timing specifications
- 4.15 eSDHC timing specifications
- 4.16 SIM timing specifications
- 4.17 SSI timing specifications
- 4.18 12-bit ADC specifications
- 4.19 12-bit DAC timing specifications
- 4.20 mcPWM timing specifications
- 4.21 I2C timing specifications
- 4.22 Ethernet assembly timing specifications
- 4.23 32-bit timer module timing specifications
- 4.24 DSPI timing specifications
- 4.25 SBF timing specifications
- 4.26 1-Wire timing specifications
- 4.27 General purpose I/O timing specifications
- 4.28 Rapid general purpose I/O timing specifications
- 4.29 JTAG and boundary scan timing specifications
- 4.30 Debug AC timing specifications
- 5 Package information
- 6 Product documentation
- 7 Revision history
MCF5441x ColdFire Microprocessor Data Sheet, Rev. 8
Electrical characteristics
Freescale Semiconductor24
External I/O pad supply voltage, nominal 3.3 V EV
DD
EVDD
3.135 3.63 V
USB supply voltage, nominal 3.3 V USBV
DD
VDD_USBO
VDD_USBH
3.135 3.63 V
ADC supply voltage AV
DD
VDDA_ADC
3.135 3.63 V
DAC supply voltage —
VDDA_DAC_
ADC
3.135 3.63 V
RTC standby supply voltage RTCV
STBY
VSTBY_RTC
1.6 EV
DD
–0.2V V
Table 11. I/O electrical specifications
Characteristic Symbol Min Max Units
CMOS input high voltage EV
IH
0.65 EV
DD
EV
DD
+0.3 V
CMOS input low voltage EV
IL
V
SS
– 0.3 0.35 EV
DD
V
CMOS output high voltage
I
OH
= –2.0 mA
EV
OH
0.8 EV
DD
—V
CMOS output low voltage
I
OL
= 2.0 mA
EV
OL
—0.2 EV
DD
V
SDRAM input high voltage
DDR2 @ 1.8V
SDV
IH
SDV
REF
+ 0.125 SDV
DD
+0.3
V
SDRAM input low voltage
DDR2 @ 1.8V
SDV
IL
0.3 SDV
REF
0.125
V
SDRAM output high voltage
DDR2@ 1.8V I
OH
= –13.4 mA
SDV
OH
SDV
DD
0.9 —
V
SDRAM output low voltage
DDR2@ 1.8V I
OH
= 13.4 mA
SDV
OL
—SDV
DD
0.1
V
FlexBus input high voltage
@ 1.8V–3.3V
FBV
IH
0.51 FBV
DD
FBV
DD
+0.3 V
FlexBus input low voltage
@ 1.8V–3.3V
FBV
IL
V
SS
– 0.3 0.42 FBV
DD
V
FlexBus output high voltage
@ 1.8V–3.3V
I
OH
= –5.0 mA for all modes
FBV
OH
0.8 FBV
DD
—V
FlexBus output low voltage
@ 1.8V–3.3V
I
OL
= 5.0 mA for all modes
FBV
OL
—0.2 FBV
DD
V
Input Leakage Current
V
in
= V
DD
or V
SS
, Input-only pins
I
in
–2.5 2.5 A
Table 10. Power supply specifications (continued)
Characteristic Symbol Pin Name Min Max Units