Datasheet

Electrical Specifications
M68HC12B Family Data Sheet, Rev. 9.1
314 Freescale Semiconductor
19.12 FLASH EEPROM Characteristics
Characteristic
(1)
1. V
DD
= 5.0 Vdc ± 10%, V
SS
= 0 Vdc, T
A
= T
L
to T
H
, unless otherwise noted
Symbol Min Typ Max Units
Program/erase supply voltage
Read only
Program/erase/verify
V
FP
V
DD
−0.35
11.4
V
DD
12.0
V
DD
+0.5
12.6
V
Program/erase supply current
Word program (V
FP
= 12 V)
Erase (V
FP
= 12 V)
I
FP
——30
4
mA
Number of programming pulses
n
PP
— — 50 Pulses
Programming pulse
t
PPULSE
20 — 25 µs
Program to verify time
t
VPROG
10 — — µs
Program margin
p
m
100
(2)
2. The number of margin pulses required is the same as the number of pulses used to program or erase.
——%
Number of erase pulses
n
EP
— — 5 Pulses
Erase pulse
t
EPULSE
5—10ms
Erase to verify time
t
VERASE
1——ms
Erase margin
e
m
100
(3)
——%
Program/erase endurance 100 — — Cycles
Data retention 10 — — Years