Datasheet

Table 21. Flash command timing specifications (continued)
Symbol Description Min. Typ. Max. Unit Notes
t
pgmchk
Program Check execution time — — 45 μs 1
t
rdrsrc
Read Resource execution time — — 30 μs 1
t
pgm4
Program Longword execution time — 65 145 μs
t
ersblk256k
Erase Flash Block execution time
• 256 KB program/data flash — 435 3700 ms
2
t
ersscr
Erase Flash Sector execution time — 14 114 ms 2
t
pgmsec512
t
pgmsec1k
t
pgmsec2k
Program Section execution time
• 512 bytes flash
• 1 KB flash
• 2 KB flash
—
—
—
2.4
4.7
9.3
—
—
—
ms
ms
ms
t
rd1all
Read 1s All Blocks execution time — — 1.8 ms
t
rdonce
Read Once execution time — — 25 μs 1
t
pgmonce
Program Once execution time — 65 — μs
t
ersall
Erase All Blocks execution time — 870 7400 ms 2
t
vfykey
Verify Backdoor Access Key execution time — — 30 μs 1
t
swapx01
t
swapx02
t
swapx04
t
swapx08
Swap Control execution time
• control code 0x01
• control code 0x02
• control code 0x04
• control code 0x08
—
—
—
—
200
70
70
—
—
150
150
30
μs
μs
μs
μs
1. Assumes 25 MHz flash clock frequency.
2. Maximum times for erase parameters based on expectations at cycling end-of-life.
6.4.1.3 Flash high voltage current behaviors
Table 22. Flash high voltage current behaviors
Symbol Description Min. Typ. Max. Unit
I
DD_PGM
Average current adder during high voltage
flash programming operation
— 2.5 6.0 mA
I
DD_ERS
Average current adder during high voltage
flash erase operation
— 1.5 4.0 mA
6.4.1.4 Reliability specifications
Table 23. NVM reliability specifications
Symbol Description Min. Typ.
1
Max. Unit Notes
Program Flash
Table continues on the next page...
Peripheral operating requirements and behaviors
K10 Sub-Family Data Sheet Data Sheet, Rev. 7, 02/2013.
32 Freescale Semiconductor, Inc.