Information

• Section programming for faster bulk programming times
• Read access to data flash memory possible while programming or erasing data in the
program flash memory
28.1.1.3 Program Acceleration RAM Features
• For devices with only program flash memory: RAM to support section programming
28.1.1.4 FlexRAM Features
For devices with FlexNVM memory:
• Memory that can be used as traditional RAM or as high-endurance EEPROM storage
• Up to 4 Kbytes of FlexRAM configured for EEPROM or traditional RAM operations
• When configured for EEPROM:
• Protection scheme prevents accidental program or erase of data written for
EEPROM
• Built-in hardware emulation scheme to automate EEPROM record maintenance
functions
• Programmable EEPROM data set size and FlexNVM partition code facilitating
EEPROM memory endurance trade-offs
• Supports FlexRAM aligned writes of 1, 2, or 4 bytes at a time
• Read access to FlexRAM possible while programming or erasing data in the
program or data flash memory
• When configured for traditional RAM:
• Read and write access possible to the FlexRAM while programming or erasing
data in the program or data flash memory
28.1.1.5 Other FTFL Module Features
• Internal high-voltage supply generator for flash memory program and erase
operations
Chapter 28 Flash Memory Module (FTFL)
K10 Sub-Family Reference Manual, Rev. 6, Nov 2011
Freescale Semiconductor, Inc. 605