Information

Table 28-31. FTFL Commands by Mode (continued)
FCMD Command
NVM Normal NVM Special
Unsecure Secure MEEN=10 Unsecure Secure MEEN=10
0x80 Program Partition × × × × — —
0x81 Set FlexRAM Function × × × × — —
28.4.10.4 Allowed Simultaneous Flash Operations
Only the operations marked 'OK' in the following table are permitted to run
simultaneously on the program flash, data flash, and FlexRAM memories. Some
operations cannot be executed simultaneously because certain hardware resources are
shared by the memories. The priority has been placed on permitting program flash reads
while program and erase operations execute on the FlexNVM and FlexRAM. This
provides read (program flash) while write (FlexNVM, FlexRAM) functionality.
For devices containing FlexNVM:
Table 28-32. Allowed Simultaneous Memory Operations
Program Flash Data Flash FlexRAM
Read Program
Sector
Erase
Read Program
Sector
Erase
Read E-Write
1
R-Write
2
Program
flash
Read — OK OK OK
Program — OK OK OK
3
Sector
Erase
— OK OK OK
Data
flash
Read OK OK —
Program OK — OK OK
Sector
Erase
OK — OK OK
FlexRAM
Read OK OK OK OK —
E-Write
1
OK —
R-Write
2
OK OK OK OK —
1. When FlexRAM configured for EEPROM (writes are effectively multi-cycle operations).
2. When FlexRAM configured as traditional RAM (writes are single-cycle operations).
3. When FlexRAM configured as traditional RAM, writes to the RAM are ignored while the Program Section command is
active (CCIF = 0).
For devices containing program flash only:
Chapter 28 Flash Memory Module (FTFL)
K10 Sub-Family Reference Manual, Rev. 6, Nov 2011
Freescale Semiconductor, Inc. 643