Information

6.4.1.1 Flash timing specifications — program and erase
The following specifications represent the amount of time the internal charge pumps are
active and do not include command overhead.
Table 19. NVM program/erase timing specifications
Symbol Description Min. Typ. Max. Unit Notes
t
hvpgm4
Longword Program high-voltage time — 7.5 18 μs
t
hversscr
Sector Erase high-voltage time — 13 113 ms 1
t
hversblk32k
Erase Block high-voltage time for 32 KB — 52 452 ms 1
t
hversblk256k
Erase Block high-voltage time for 256 KB — 104 904 ms 1
1. Maximum time based on expectations at cycling end-of-life.
6.4.1.2 Flash timing specifications — commands
Table 20. Flash command timing specifications
Symbol Description Min. Typ. Max. Unit Notes
t
rd1blk32k
t
rd1blk256k
Read 1s Block execution time
• 32 KB data flash
• 256 KB program flash
—
—
—
—
0.5
1.7
ms
ms
t
rd1sec1k
Read 1s Section execution time (data flash
sector)
— — 60 μs 1
t
rd1sec2k
Read 1s Section execution time (program flash
sector)
— — 60 μs 1
t
pgmchk
Program Check execution time — — 45 μs 1
t
rdrsrc
Read Resource execution time — — 30 μs 1
t
pgm4
Program Longword execution time — 65 145 μs
t
ersblk32k
t
ersblk256k
Erase Flash Block execution time
• 32 KB data flash
• 256 KB program flash
—
—
55
122
465
985
ms
ms
2
t
ersscr
Erase Flash Sector execution time — 14 114 ms 2
t
pgmsec512p
t
pgmsec512d
t
pgmsec1kp
t
pgmsec1kd
Program Section execution time
• 512 B program flash
• 512 B data flash
• 1 KB program flash
• 1 KB data flash
—
—
—
—
2.4
4.7
4.7
9.3
—
—
—
—
ms
ms
ms
ms
t
rd1all
Read 1s All Blocks execution time — — 1.8 ms
t
rdonce
Read Once execution time — — 25 μs 1
t
pgmonce
Program Once execution time — 65 — μs
t
ersall
Erase All Blocks execution time — 175 1500 ms 2
Table continues on the next page...
Peripheral operating requirements and behaviors
K10 Sub-Family Data Sheet, Rev. 3, 11/2012.
Freescale Semiconductor, Inc. 31