Information

Table 20. Flash command timing specifications (continued)
Symbol Description Min. Typ. Max. Unit Notes
t
vfykey
Verify Backdoor Access Key execution time — — 30 μs 1
t
swapx01
t
swapx02
t
swapx04
t
swapx08
Swap Control execution time
• control code 0x01
• control code 0x02
• control code 0x04
• control code 0x08
—
—
—
—
200
70
70
—
—
150
150
30
μs
μs
μs
μs
t
pgmpart32k
Program Partition for EEPROM execution time
• 32 KB FlexNVM — 70 — ms
t
setramff
t
setram8k
t
setram32k
Set FlexRAM Function execution time:
• Control Code 0xFF
• 8 KB EEPROM backup
• 32 KB EEPROM backup
—
—
—
50
0.3
0.7
—
0.5
1.0
μs
ms
ms
Byte-write to FlexRAM for EEPROM operation
t
eewr8bers
Byte-write to erased FlexRAM location execution
time
— 175 260 μs 3
t
eewr8b8k
t
eewr8b16k
t
eewr8b32k
Byte-write to FlexRAM execution time:
• 8 KB EEPROM backup
• 16 KB EEPROM backup
• 32 KB EEPROM backup
—
—
—
340
385
475
1700
1800
2000
μs
μs
μs
Word-write to FlexRAM for EEPROM operation
t
eewr16bers
Word-write to erased FlexRAM location
execution time
— 175 260 μs
t
eewr16b8k
t
eewr16b16k
t
eewr16b32k
Word-write to FlexRAM execution time:
• 8 KB EEPROM backup
• 16 KB EEPROM backup
• 32 KB EEPROM backup
—
—
—
340
385
475
1700
1800
2000
μs
μs
μs
Longword-write to FlexRAM for EEPROM operation
t
eewr32bers
Longword-write to erased FlexRAM location
execution time
— 360 540 μs
t
eewr32b8k
t
eewr32b16k
t
eewr32b32k
Longword-write to FlexRAM execution time:
• 8 KB EEPROM backup
• 16 KB EEPROM backup
• 32 KB EEPROM backup
—
—
—
545
630
810
1950
2050
2250
μs
μs
μs
1. Assumes 25 MHz flash clock frequency.
2. Maximum times for erase parameters based on expectations at cycling end-of-life.
3. For byte-writes to an erased FlexRAM location, the aligned word containing the byte must be erased.
Peripheral operating requirements and behaviors
K10 Sub-Family Data Sheet, Rev. 3, 11/2012.
32 Freescale Semiconductor, Inc.