Datasheet
1. Assumes 25 MHz flash clock frequency.
2. Maximum times for erase parameters based on expectations at cycling end-of-life.
3. For byte-writes to an erased FlexRAM location, the aligned word containing the byte must be erased.
6.4.1.3 Flash high voltage current behaviors
Table 22. Flash high voltage current behaviors
Symbol Description Min. Typ. Max. Unit
I
DD_PGM
Average current adder during high voltage
flash programming operation
— 2.5 6.0 mA
I
DD_ERS
Average current adder during high voltage
flash erase operation
— 1.5 4.0 mA
6.4.1.4 Reliability specifications
Table 23. NVM reliability specifications
Symbol Description Min. Typ.
1
Max. Unit Notes
Program Flash
t
nvmretp10k
Data retention after up to 10 K cycles 5 50 — years
t
nvmretp1k
Data retention after up to 1 K cycles 20 100 — years
n
nvmcycp
Cycling endurance 10 K 50 K — cycles 2
Data Flash
t
nvmretd10k
Data retention after up to 10 K cycles 5 50 — years
t
nvmretd1k
Data retention after up to 1 K cycles 20 100 — years
n
nvmcycd
Cycling endurance 10 K 50 K — cycles 2
FlexRAM as EEPROM
t
nvmretee100
Data retention up to 100% of write endurance 5 50 — years
t
nvmretee10
Data retention up to 10% of write endurance 20 100 — years
n
nvmwree16
n
nvmwree128
n
nvmwree512
n
nvmwree4k
n
nvmwree32k
Write endurance
• EEPROM backup to FlexRAM ratio = 16
• EEPROM backup to FlexRAM ratio = 128
• EEPROM backup to FlexRAM ratio = 512
• EEPROM backup to FlexRAM ratio = 4096
• EEPROM backup to FlexRAM ratio =
32,768
35 K
315 K
1.27 M
10 M
80 M
175 K
1.6 M
6.4 M
50 M
400 M
—
—
—
—
—
writes
writes
writes
writes
writes
3
1. Typical data retention values are based on measured response accelerated at high temperature and derated to a constant
25°C use profile. Engineering Bulletin EB618 does not apply to this technology. Typical endurance defined in Engineering
Bulletin EB619.
2. Cycling endurance represents number of program/erase cycles at -40°C ≤ T
j
≤ 125°C.
3. Write endurance represents the number of writes to each FlexRAM location at -40°C ≤Tj ≤ 125°C influenced by the cycling
endurance of the FlexNVM (same value as data flash) and the allocated EEPROM backup per subsystem. Minimum and
typical values assume all byte-writes to FlexRAM.
Peripheral operating requirements and behaviors
K20 Sub-Family Data Sheet Data Sheet, Rev. 7, 02/2013.
Freescale Semiconductor, Inc. 35