Datasheet

4.2.1 Programmable Trade-Off
FlexMemory lets you fully configure the way FlexNVM and FlexRAM blocks are used to provide the best balance of
memory resources for their application.
The user can configure several parameters, including EEPROM size, endurance, write size, and the size of additional
program/data flash.
In addition to this flexibility, FlexMemory provides superior EEPROM performance, endurance, and low-voltage operation
when compared to traditional EEPROM solutions.
• Enhanced EEPROM — Combines FlexRAM and FlexNVM to create byte-write/erase, high-speed, and high-endurance
EEPROM
• FlexNVM — Can be used as:
• part of the EEPROM configuration,
• additional program or data flash, or
• a combination of the above. For example, a portion can be used as flash while the rest is used for enhanced
EEPROM backup.
• FlexRAM — Can be used as part of the EEPROM configuration or as additional system RAM
4.2.2 Use Case Example
The MCU has 128 KB program flash, 32 KB SRAM, and FlexMemory has 128 KB FlexNVM and 4 KB FlexRAM
(maximum EEPROM size). The application requires 8 KB additional program flash for a bootloader and 256 bytes of high-
endurance EEPROM. The user allocates 8 KB of FlexNVM for the additional program flash and the remaining 120 KB for
EEPROM backup.
The user defines 256 bytes of EEPROM size from the FlexRAM. In this example, the EEPROM endurance results in a
minimum of 2.32M write/erase cycles.
4.3 Part Numbers and Packaging
Q K## A M FFF T PP CC (N)
Qualification status
Family
Memory
Flash size
Temperature range (°C)
Speed (MHz)
Package identifier
Tape and Reel (T&R)
Key attribute
Figure 3. Part numbers diagrams
Field Description Values
Q Qualification status • M = Fully qualified, general market flow
• P = Prequalification
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Features
K20 Family Product Brief, Rev. 11, 08/2012
8 Freescale Semiconductor, Inc.