Information

TSIx_GENCS field descriptions (continued)
Field Description
0010 10 ms scan interval
0011 15 ms scan interval
0100 20 ms scan interval
0101 30 ms scan interval
0110 40 ms scan interval
0111 50 ms scan interval
1000 75 ms scan interval
1001 100 ms scan interval
1010 125 ms scan interval
1011 150 ms scan interval
1100 200 ms scan interval
1101 300 ms scan interval
1110 400 ms scan interval
1111 500 ms scan interval
23–19
NSCN
Number of Consecutive Scans per Electrode electrode.
This bit-field can only be changed if the TSI module is disabled (TSIEN bit = 0).
00000 Once per electrode
00001 Twice per electrode
00010 3 times per electrode
00011 4 times per electrode
00100 5 times per electrode
00101 6 times per electrode
00110 7 times per electrode
00111 8 times per electrode
01000 9 times per electrode
01001 10 times per electrode
01010 11 times per electrode
01011 12 times per electrode
01100 13 times per electrode
01101 14 times per electrode
01110 15 times per electrode
01111 16 times per electrode
10000 17 times per electrode
10001 18 times per electrode
10010 19 times per electrode
10011 20 times per electrode
10100 21 times per electrode
10101 22 times per electrode
10110 23 times per electrode
10111 24 times per electrode
11000 25 times per electrode
11001 26 times per electrode
11010 27 times per electrode
11011 28 times per electrode
11100 29 times per electrode
Table continues on the next page...
Memory map and register definition
K20 Sub-Family Reference Manual, Rev. 2, Feb 2012
1196 Freescale Semiconductor, Inc.