Information

6.4.1.2 Flash timing specifications — commands
Table 19. Flash command timing specifications
Symbol Description Min. Typ. Max. Unit Notes
t
rd1blk32k
t
rd1blk128k
Read 1s Block execution time
• 32 KB data flash
• 128 KB program flash
—
—
—
—
0.5
1.7
ms
ms
t
rd1sec1k
Read 1s Section execution time (flash sector) — — 60 μs 1
t
pgmchk
Program Check execution time — — 45 μs 1
t
rdrsrc
Read Resource execution time — — 30 μs 1
t
pgm4
Program Longword execution time — 65 145 μs
t
ersblk32k
t
ersblk128k
Erase Flash Block execution time
• 32 KB data flash
• 128 KB program flash
—
—
55
61
465
495
ms
ms
2
t
ersscr
Erase Flash Sector execution time — 14 114 ms 2
t
pgmsec512
t
pgmsec1k
Program Section execution time
• 512 B flash
• 1 KB flash
—
—
4.7
9.3
—
—
ms
ms
t
rd1all
Read 1s All Blocks execution time — — 1.8 ms
t
rdonce
Read Once execution time — — 25 μs 1
t
pgmonce
Program Once execution time — 65 — μs
t
ersall
Erase All Blocks execution time — 115 1000 ms 2
t
vfykey
Verify Backdoor Access Key execution time — — 30 μs 1
t
pgmpart32k
Program Partition for EEPROM execution time
• 32 KB FlexNVM — 70 — ms
t
setramff
t
setram8k
t
setram32k
Set FlexRAM Function execution time:
• Control Code 0xFF
• 8 KB EEPROM backup
• 32 KB EEPROM backup
—
—
—
50
0.3
0.7
—
0.5
1.0
μs
ms
ms
Byte-write to FlexRAM for EEPROM operation
t
eewr8bers
Byte-write to erased FlexRAM location execution
time
— 175 260 μs 3
t
eewr8b8k
t
eewr8b16k
t
eewr8b32k
Byte-write to FlexRAM execution time:
• 8 KB EEPROM backup
• 16 KB EEPROM backup
• 32 KB EEPROM backup
—
—
—
340
385
475
1700
1800
2000
μs
μs
μs
Table continues on the next page...
Peripheral operating requirements and behaviors
K20 Sub-Family Data Sheet, Rev. 4 5/2012.
Freescale Semiconductor, Inc. 31